By Alexander V. Latyshev,Anatoliy V. Dvurechenskii,Alexander L. Aseev
Advances in Semiconductor Nanostructures: progress, Characterization, houses and purposes focuses at the actual elements of semiconductor nanostructures, together with development and processing of semiconductor nanostructures by way of molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser motion on every kind of III–V, IV, and II–VI semiconductors, nanofabrication through bottom-up and top-down methods, real-time observations utilizing in situ UHV-REM and high-resolution TEM of atomic constitution of quantum good, nanowires, quantum dots, and heterostructures and their electric, optical, magnetic, and spin phenomena.
The very entire nature of the publication makes it an integral resource of data for researchers, scientists, and post-graduate scholars within the box of semiconductor physics, condensed subject physics, and physics of nanostructures, supporting them of their day-by-day examine.
- Presents a accomplished reference at the novel actual phenomena and houses of semiconductor nanostructures
- Covers contemporary advancements within the box from all around the world
- Provides a world technique, as chapters are in response to effects received in collaboration with learn teams from Russia, Germany, France, England, Japan, Holland, united states, Belgium, China, Israel, Brazil, and previous Soviet Union countries
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications by Alexander V. Latyshev,Anatoliy V. Dvurechenskii,Alexander L. Aseev